Heteroepitaxial Growth of Ge Nanowires on Si Substrates

Electron beam evaporation has been used to prepare Ge nanowires (NWs) on top of (111) Si substrates. Despite the non-UHV growth conditions, scanning and transmission electron microscopies demonstrate that NWs are single crystal with specific crystallographic growth directions ([111], [110], and [112]). NWs are faceted, exhibiting the lower energy plans on the surface. The faceting depends on the growth direction. Moreover, the detrimental effects for Ge NWs growth of O atoms contamination are discussed. Finally, we describe how a proper preparation of the Au catalyst is able to increase the Ge NW density by a factor of 4, while heteroepitaxy and faceting features are maintained

Kinetics of large B clusters in crystalline and preamorphized silicon

Producción CientíficaWe present an extended model for B clustering in crystalline or in preamorphized Si and with validity under conditions below and above the equilibrium solid solubility limit of B in Si. This model includes boron-interstitial clusters (BICs) with BnIm configurations—complexes with n B atoms and m Si interstitials—larger (n > 4), and eventually more stable, than those included in previous models. In crystalline Si, the formation and dissolution pathways into large BICs configurations require high B concentration and depend on the flux of Si interstitials. In the presence of high Si interstitial flux, large BICs with a relatively large number of interstitials (m ≥ n) are formed, dissolving under relatively low thermal budgets. On the contrary, for low Si interstitial flux large BICs with few interstitials (m ≪ n) can form, which are more stable than small BICs, and whose complete dissolution requires very intense thermal budgets. We have also investigated the kinetics of large BICs in preamorphized Si, both experimentally and theoretically. B was implanted at a high-dose into preamorphized Si, and the B precipitation was studied by transmission electron microscopy and by sheet resistance and Hall measurement techniques. A simplified model for B clustering and redistribution in amorphous Si is proposed, including the experimental value for the B diffusivity in amorphous Si and the energetics of BICs. Our model suggests that B2, B3I, B4I and B4I2 clusters are the most energetically favored configurations, with relative abundance depending on B concentration. After recrystallization, thermal anneals up to 1100 °C evidence that BICs evolve under very low flux of Si interstitials under the particular experimental conditions considered. Simulations indicate that for very high B concentrations and low Si interstitial flux a significant fraction of the initial small BICs evolves into larger and very stable BIC configurations that survive even after intense thermal budgets, as confirmed by energy filtered transmission electron microscopy analyses. The correlation between simulations and Hall measurements on these samples suggest that hole mobility is significantly degraded by the presence of a high concentration of BICs.Ministerio de Economía, Industria y Competitividad (Project TEC2008-06069)Junta de Castilla y León (programa de apoyo a proyectos de investigación - Ref. VA011A09

CdSe/CdS/ZnS Double Shell Nanorods with High Photoluminescence Efficiency and Their Exploitation As Biolabeling Probes

We report the synthesis, the structural and optical characterization of CdSe/CdS/ZnS "double shell" nanorods and their exploitation in cell labeling experiments. To synthesize such nanorods, first "dot-in-a-rod" CdSe(dot)/CdS(rod) core/shell nanocrystals were prepared. Then a ZnS shell was grown epitaxially over these CdSe/CdS nanorods, which led to a fluorescence quantum yield of the final core-shell-shell nanorods that could be as high as 75%. The quantum efficiency was correlated with the aspect ratio of the nanorods and with the thickness of the ZnS shell around the starting CdSe/CdS rods, which varied from 1 to 4 monolayers (as supported by a combination of X-ray diffraction, elemental analysis with inductively coupled plasma atomic emission spectroscopy and high resolution transmission electron microscopy analysis). Pump-probe and time-resolved photoluminescence measurements confirmed the reduction of trapping at CdS surface due to the presence of the ZnS shell, which resulted in more efficient photoluminescence. These double shell nanorods have potential applications as fluorescent biological labels, as we found that they are brighter in cell imaging as compared to the starting CdSe/CdS nanorods and to the CdSe/ZnS quantum dots, therefore a lower amount of material is required to label the cells. Concerning their cytotoxicity, according to the MTT assay, the double shell nanorods were less toxic than the starting core/shell nanorods and than the CdSe/ZnS quantum dots, although the latter still exhibited a lower intracellular toxicity than both nanorod samples

Eu^3+ reduction and efficient light emission in Eu_2O_3 films deposited on Si substrates

none7A stable Eu3+→Eu2+ reduction is accomplished by thermal annealing in N2 ambient of Eu2O3 films deposited by magnetron sputtering on Si substrates. Transmission electron microscopy and x-ray diffraction measurements demonstrate the occurrence of a complex reactivity at the Eu2O3/Si interface, leading to the formation of Eu2+ silicates, characterized by a very strong (the measured external quantum efficiency is about 10%) and broad room temperature photoluminescence (PL) peak centered at 590 nm. This signal is much more efficient than the Eu3+ emission, mainly consisting of a sharp PL peak at 622 nm, observed in O2-annealed films, where the presence of a SiO2 layer at the Eu2O3/Si interface prevents Eu2+ formation.noneGabriele, Bellocchi; Giorgia, Franzò; Fabio, Iacona; Simona, Boninelli; Maria, Miritello; Cesca, Tiziana; Francesco, PrioloGabriele, Bellocchi; Giorgia, Franzò; Fabio, Iacona; Simona, Boninelli; Maria, Miritello; Cesca, Tiziana; Francesco, Priol

Aluminium Implantation in Germanium: Uphill Diffusion, Electrical Activation, and Trapping

This study presents a broad investigation on Al implantation in crystalline Ge. We show that up to 600 degrees C, Al does not diffuse and a remarkable electrical activation of similar to 1 x 10(20) cm(-3) is obtained. For higher annealing temperatures (from 700 to 800 degrees C), Al shows a significant diffusion towards the bulk and an unexpected uphill diffusion next to the surface, where the electrical measurements indicate a significant deactivation of Al. Both these latter observations are explained in terms of the presence of dopant traps, able to make immobile and electrically inactive the dopant next to the surface. (C) 2012 The Japan Society of Applied Physic

Structural investigations of Inductively Coupled Plasma ultra-thin silicon nanowires

cited By 0; Conference of 11th IEEE Nanotechnology Materials and Devices Conference, NMDC 2016 ; Conference Date: 9 October 2016 Through 12 October 2016; Conference Code:125383International audienceWe demonstrated the high throughput production of ultra-thin SiNWs by the innovative Inductively Coupled Plasma (ICP) approach. Our investigations revealed that the vast majority (∼95%) of the ICP produced SiNWs grew according to the Oxide Assisted Growth mechanism, and the 5% through the Vapor-Liquid-Solid mechanism. These SiNWs present an intriguing internal nanostructure, that provides a new kind of nanocomposite, where quantum confinement effects are expected. Indeed, an intense photoluminescence emission in the near infra-red was observed. These results prove the ICP as a genuinely bulk process, which can be exploited for large scale production of thin SiNWs to be integrated into attractive large-area and flexible optoelectronic devices

Effect of Nitrogen and Aluminum Doping on 3C-SiC Heteroepitaxial Layers Grown on 4° Off-Axis Si (100)

This work provides a comprehensive investigation of nitrogen and aluminum doping and its consequences for the physical properties of 3C-SiC. Free-standing 3C-SiC heteroepitaxial layers, intentionally doped with nitrogen or aluminum, were grown on Si (100) substrate with different 4° off-axis in a horizontal hot-wall chemical vapor deposition (CVD) reactor. The Si substrate was melted inside the CVD chamber, followed by the growth process. Micro-Raman, photoluminescence (PL) and stacking fault evaluation through molten KOH etching were performed on different doped samples. Then, the role of the doping and of the cut angle on the quality, density and length distribution of the stacking faults was studied, in order to estimate the influence of N and Al incorporation on the morphological and optical properties of the material. In particular, for both types of doping, it was observed that as the dopant concentration increased, the average length of the stacking faults (SFs) increased and their density decreased

Continuous-wave laser annealing of Si-rich oxide: A microscopic picture of macroscopic Si-SiO2 phase separation

We report on the first observation of the macroscopic (long-range) phase separation in Si-rich oxide SiOx(x<2) obtained by continuous-wave laser annealing of free-standing SiOx films. The effect is analyzed by a unique combination of microscopic methods (Raman, transmission, photoluminescence, and infrared spectroscopy, transmission electron microscopy, electron energy loss spectroscopy, and x-ray photoelectron spectroscopy). Three regions can be distinguished on a SiOx free-standing film after 488 nm laser annealing at intensities above similar to 10(4) W cm(-2): central spot, ring around the central spot, and pristine film outside the irradiated area. In the pristine SiOx material, small Si nanocrystals (Si-nc) (diameters of a few nanometer) are surrounded by SiO2 with an addition of residual suboxides, the Si-nc being produced by annealing at 1100 degrees C in a furnace. The central spot of the laser-annealed area (up to similar to 30 mu m wide in these experiments) is practically free of Si excess and mainly consists of amorphous SiO2. The ring around the central spot contains large spherical Si-nc (diameters up to similar to 100 nm) embedded in amorphous SiO2 without the presence of suboxides. Laser-induced temperatures in the structurally modified regions presumably exceed the Si melting temperature. The macroscopic Si-SiO2 phase separation is connected with extensive diffusion in temperature gradient leading to the Si concentration gradient. The present work demonstrates the advantages of high spatial resolution for analysis in materials research. (C) 2010 American Institute of Physics. [doi:10.1063/1.3520673